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Advanced Technical Information
HiPerFET TM
Power MOSFETs
Single Die MOSFET
IXFN 340N06
V DSS = 60 V
I D25 = 340 A
R DS(on) = 3 m W
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
G
S
D
S
t rr ￡ 250 ns
Symbol
V DSS
V DGR
V GS
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
Maximum Ratings
60 V
60 V
± 20 V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
V GSM
Transient
± 30
V
I D25
I L(RMS)
I DM
T C = 25 ° C, Chip capability
Terminal current limit
T C = 25 ° C, pulse width limited by T JM
340
100
1360
A
A
A
D
S
I AR
E AR
E AS
dv/dt
P D
T J
T JM
T stg
V ISOL
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
50/60 Hz, RMS t = 1 min
I ISOL ￡ 1 mA t=1s
200
64
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
A
mJ
J
V/ns
W
° C
° C
° C
V~
V~
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
? International standard packages
? miniBLOC, with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
M d
Weight
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
rated
? Low package inductance
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? DC-DC converters
? Battery chargers
? Switched-mode and resonant-mode
V DSS
V GH(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 8 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 100A
Pulse test, t ￡ 300 m s,
duty cycle d ￡ 2 %
T J = 25 ° C
T J = 125 ° C
60
2.0
4.0
± 200
100
2
3
V
V
nA
m A
mA
m W
power supplies
? DC choppers
? Temperature and lighting controls
Advantages
? Easy to mount
? Space savings
? High power density
? 2000 IXYS All rights reserved
98751 (10/00)
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